Transient current changes induced in pin-diodes by nanosecond electron pulsesLEONHARDT, J. W; GOLDNER, R; BOS, J et al.Radiation physics and chemistry. 1984, Vol 24, Num 5-6, pp 591-592, issn 0146-5724Article

1/f Mobility fluctuations in p-i-n and p-ν-n diodesKLEINPENNING, T. G. M.Physica B, Condensed matter. 1988, Vol 154, Num 1, pp 27-34Article

Bruit de mode transverse d'une diode P.I.N = Transversal mode noise of a P.I.N. diodeBLANC, F; FANGUIN, R; RAOULT, G et al.Annales françaises des microtechniques et de chronométrie. 1984, Vol 38, Num 1-4, issn 0294-1228, non pagArticle

Field-drifting resonance tunneling through a-Si:H/a-Si_1-xC_x:H double barrier in the p-i-n-structureJIANG, Y. L; HWANG, H. L.Japanese journal of applied physics. 1988, Vol 27, Num 12, pp L2434-L2437, issn 0021-4922, 2Article

Equivalence of electrons and holes in a-Si p-s-n diodesKUSIAN, W; PFLEIDERER, H; BULLEMER, B et al.Journal of applied physics. 1988, Vol 64, Num 10, pp 5220-5224, issn 0021-8979Article

Zuverlässiger Zweiwegeschalter mit PIN-Dioden = Un commutateur fiable à deux voies avec des diodes à couche intrinsèque = Reliable two-way switch with PIN diodesMICHLER, E.Nachrichtentechnik. Elektronik. 1984, Vol 34, Num 2, pp 49-50, issn 0323-4657Article

Analysis of the linear and nonlinear time response of a P-i-N photodiode by a two-valley modelMATAVULJ, P. S; GVOZDIC, D. M; RADUNOVIC, J. B et al.International conference on microelectronic. 1997, pp 331-334, isbn 0-7803-3664-X, 2VolConference Paper

Dark current in GaAs_1-xSb_x p⁺-i-n junctionsRADOJEWSKA, E. B; PŁACZEK-POPKO, E; KASPRZAK, J. F et al.Acta physica Polonica. A. 1989, Vol 75, Num 2, pp 343-345, issn 0587-4246, 3 p.Article

Computer-aided thermal analysis of reverse-biased pin diodesRAMAMURTHY, V; BHAT, K. N.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 3, issn 0143-7100, 170Article

Asymptotes for boundary determined current density of PIN diodesMCGHEE, J; HENDERSON, I. A; SAFFARI, M et al.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 6, pp 272-276, issn 0143-7100Article

Rise time of silicon p-i-n photodiodesDIURIC, Z; RADIENOVIC, B.Solid-state electronics. 1983, Vol 26, Num 12, pp 1143-1149, issn 0038-1101Article

Efficient Silicon-photonic modulator with recessed electrodesZHENG, D. W; SMITH, B. T; ASGHARI, M et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 68980A.1-68980A.8, issn 0277-786X, isbn 978-0-8194-7073-7, 1VolConference Paper

p-i-n photodiodes made in laser-recrystallized silicon-on-insulatorCOLINGE, J.-P.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 2, pp 203-205, issn 0018-9383Article

Switched reflection phase shifterKORI, M. H; MAHAPATRA, S.Electronics Letters. 1986, Vol 22, Num 10, pp 550-551, issn 0013-5194Article

Planar GaAs p-i-n photodiode with picosecond time responseLENTH, W; CHU, A; MAHONEY, L. J et al.Applied physics letters. 1985, Vol 46, Num 2, pp 191-193, issn 0003-6951Article

Additional comments on p-i-n diode attenuator with small phase shift. ReplySTARSKI, J. P; ALBINSSON, B. M.IEEE transactions on microwave theory and techniques. 1989, Vol 37, Num 10, pp 1658-1659, issn 0018-9480Article

Single pin diode X-band phase shifterFREE, C. E; AITCHISON, C. S.Electronics Letters. 1985, Vol 21, Num 4, pp 128-129, issn 0013-5194Article

Caractéristiques V-A d'une diode p-i-n aux très hauts niveaux d'injectionABRAMOV, A. A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 11, pp 1957-1962, issn 0015-3222Article

THE EFFECT OF SURFACE RECOMBINATION ON PIN DIODESAITCHISON JM; BERZ F.1981; SOLID-STATE ELECTRON.; ISSN 0038-1101; GBR; DA. 1981; VOL. 24; NO 9; PP. 795-804; BIBL. 12 REF.Article

PIN-BIPOLAR OPTICAL RECEIVER USING A HIGH-FREQUENCY HIGH-BETA TRANSISTORMITCHELL AF; O'MAHONY MJ; BOXALL BA et al.1983; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1983; VOL. 19; NO 12; PP. 445-447; BIBL. 6 REF.Article

DESIGN AND DEVELOPMENT OF L-BAND PIN DIODE SPDT SWITCHESSARKAR BK.1980; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; IND; DA. 1980; VOL. 26; NO 10; PP. 550-552; BIBL. 4 REF.Article

DESIGN AND OBSERVED CHARACTERISTICS OF X-BAND PIN DIODE LIMITERS.SARKAR BK.1975; J. INSTIT. ELECTRON. TELECOMMUNIC. ENGRS; INDIA; DA. 1975; VOL. 21; NO 7; PP. 378-382; BIBL. 3 REF.Article

CALCUL DES ATTENUATIONS A DIODES P-I-NSAMSONOV AV.1975; TRUDY MOSKOV. ENERGET. INST.; S.S.S.R.; DA. 1975; NO 265; PP. 138-141; BIBL. 1 REF.Article

ETUDE DES COMMUTATEURS ELECTRONIQUES A NOMBRE ARBITRAIRE DE DIODES DANS UNE VOIETSYPKIN EH R.1975; IZVEST. VYSSH. UCHEBN. ZAVED., RADIOELEKTRON.; S.S.S.R.; DA. 1975; VOL. 18; NO 1; PP. 22-28; BIBL. 3 REF.Article

LOW-DRAIN PIN-DIODE TR SWITCHCHORNEY P.1973; MICROWAVE J.; U.S.A.; DA. 1973; VOL. 16; NO 2; PP. 16-20 (3 P.); BIBL. 2 REF.Serial Issue